Nanocrystalline TiO2/Ti3C2Tx MXene composites with a tunable work function prepared using atmospheric pressure oxygen plasma.

Composites of TiO2 and Ti3C2Tx MXene are of great interest because they combine superior TiO2 photocatalytic activity with excellent MXene conductivity. As these composites have conventionally been prepared using methods requiring high temperatures, a process for producing similar materials at reduced temperature could be beneficial for applications in flexible and printed electronics. Therefore, we used low-temperature dielectric barrier discharge to develop a method for forming crystalline TiO2 by treating Ti3C2Tx MXene surfaces with high-power-density oxygen plasma comprising various energetic and reactive oxygen species, which oxidize MXene surfaces and form TiO2 nanoparticles on disordered graphitic carbon sheets within a few seconds. Scanning electron microscopy was used to observe the plasma-induced morphological changes to elucidate the TiO2 formation mechanism. The MXene surface chemistry was studied in detail using X-ray photoelectron spectroscopy and ab initio modelling. The crystalline phase of TiO2 was further studied using transmission electron microscopy and Raman spectroscopy. The results presented here suggest the formation of small anatase nanoparticles on the surface of MXenes within just seconds of plasma exposure. Nanoparticles grew with prolonged plasma treatment and a transition from anatase to rutile was observed. Considering that the temperature of plasma was always below 70 °C, the oxygen plasma process for the preparation of TiO2/Ti3C2Tx composites is an excellent candidate for application on temperature-sensitive substrates in flexible and printed electronics.

Synthesis and Raman spectroscopy of a layered SiS2 phase at high pressures.

Dichalcogenides are known to exhibit layered solid phases, at ambient and high pressures, where 2D layers of chemically bonded formula units are held together by van der Waals forces. These materials are of great interest for solid-state sciences and technology, along with other 2D systems such as graphene and phosphorene. SiS2 is an archetypal model system of the most fundamental interest within this ensemble. Recently, high pressure (GPa) phases with Si in octahedral coordination by S have been theoretically predicted and also experimentally found to occur in this compound. At variance with stishovite in SiO2, which is a 3D network of SiO6 octahedra, the phases with octahedral coordination in SiS2 are 2D layered. Very importantly, this type of semiconducting material was theoretically predicted to exhibit continuous bandgap closing with pressure to a poor metallic state at tens of GPa. We synthesized layered SiS2 with octahedral coordination in a diamond anvil cell at 7.5-9 GPa, by laser heating together elemental S and Si at 1300-1700 K. Indeed, Raman spectroscopy up to 64.4 GPa is compatible with continuous bandgap closing in this material with the onset of either weak metallicity or of a narrow bandgap semiconductor state with a large density of defect-induced, intra-gap energy levels, at about 57 GPa. Importantly, our investigation adds up to the fundamental knowledge of layered dichalcogenides.

Creating new layered structures at high pressures: SiS2.

Old and novel layered structures are attracting increasing attention for their physical, electronic, and frictional properties. SiS2, isoelectronic to SiO2, CO2 and CS2, is a material whose phases known experimentally up to 6 GPa exhibit 1D chain-like, 2D layered and 3D tetrahedral structures. We present highly predictive ab initio calculations combined with evolutionary structure search and molecular dynamics simulations of the structural and electronic evolution of SiS2 up to 100 GPa. A highly stable CdI2-type layered structure, which is octahedrally coordinated with space group surprisingly appears between 4 and up to at least 100 GPa. The tetrahedral-octahedral switch is naturally expected upon compression, unlike the layered character realized here by edge-sharing SiS6 octahedral units connecting within but not among sheets. The predicted phase is semiconducting with an indirect band gap of about 2 eV at 10 GPa, decreasing under pressure until metallization around 40 GPa. The robustness of the layered phase suggests possible recovery at ambient pressure, where calculated phonon spectra indicate dynamical stability. Even a single monolayer is found to be dynamically stable in isolation, suggesting that it could possibly be sheared or exfoliated from bulk -SiS2.

Structural transformation between long and short-chain form of liquid sulfur from ab initio molecular dynamics.

We present results of ab initio molecular dynamics study of the structural transformation occurring in hot liquid sulfur under high pressure, which corresponds to the recently observed chain-breakage phenomenon and to the electronic transition reported earlier. The transformation is temperature-induced and separates two distinct polymeric forms of liquid sulfur: high-temperature form composed of short chain-like fragments with open endings and low-temperature form with very long chains. We offer a structural description of the two liquid forms in terms of chain lengths, cross-linking, and chain geometry and investigate several physical properties. We conclude that the transformation is accompanied by changes in energy (but not density) as well as in diffusion coefficient and electronic properties­semiconductor-metal transition. We also describe the analogy of the investigated process to similar phenomena that take place in two other chalcogens selenium and tellurium. Finally, we remark that the behavior of heated liquid sulfur at ambient pressure might indicate a possible existence of a critical point in the low-pressure region of sulfur phase diagram.

Transformation pathways in high-pressure solid nitrogen: from molecular N2 to polymeric cg-N.

The transformation pathway in high-pressure solid nitrogen from N2 molecular state to polymeric cg-N phase was investigated by means of ab initio molecular dynamics and metadynamics simulations. In our study, we observed a transformation mechanism starting from molecular Immm phase that initiated with formation of trans-cis chains. These chains further connected within layers and formed a chain-planar state, which we describe as a mixture of two crystalline structures--trans-cis chain phase and planar phase, both with Pnma symmetry. This mixed state appeared in molecular dynamics performed at 120 GPa and 1500 K and in the metadynamics run at 110 GPa and 1500 K, where the chains continued to reorganize further and eventually formed cg-N. During separate simulations, we also found two new phases--molecular P2(1)/c and two-three-coordinated chain-like Cm. The transformation mechanism heading towards cg-N can be characterized as a progressive polymerization process passing through several intermediate states of variously connected trans-cis chains. In the final stage of the transformation chains in the layered form rearrange collectively and develop new intraplanar as well as interplanar bonds leading to the geometry of cg-N. Chains with alternating trans and cis conformation were found to be the key entity--structural pattern governing the dynamics of the simulated molecular-polymeric transformation in compressed nitrogen.